In 2006, he entered the School of Electronic Information Engineering of Beijing Jiaotong University to study for a doctorate degree in communication and information systems. In July 2011, he joined the School of Physics of Peking University as a post-doctoral fellow, mainly engaged in the characteristics and application of optoelectronic devices. Joined the School of Computer and Communication Engineering, University of Science and Technology Beijing in July 2014. His current research interests include optoelectronic devices and optical wireless communications.

Huimin Lu, Tongjun Yu, Chuanyu Jia, Yini Zhang, Jianping Wang, Guoyi Zhang, “Performance improvement of VLC system by using GaN-based LEDs with strain relief layers,” IEEE Photonics Technology Letters, 2016, 28(9): 1038. (SCI)
Huimin Lu, Tongjun Yu, Xinjuan Chen, Jianping Wang, Zhizhong Chen, and Guoyi Zhang, “Surface emission enhancement for deep ultraviolet AlGaN-based LEDs using triangular shaped quantum wells,” Superlattices and Microstructures, 2016, 91(1): 112. (SCI)
Huimin Lu, Chaowen Yan, Wei Gao, Tongjun Yu, Jianping Wang, “Efficiency droop effects of GaN-based light-emitting diodes on the performance of code division multiple access visible-light communication system,” Optical Engineering, 2016, 55(2): 027109. (SCI)
Huimin Lu, Tongjun Yu, Genxiang Chen, Jianping Wang and Guoyi Zhang, “Band engineering for surface emission enhancement in Al-rich AlGaN-based deep-ultraviolet light emitting diodes,” Japanese Journal of Applied Physics, 2016, 55(5s): 05FJ12. (SCI)
Huimin Lu, Tongjun Yu, Yuebin Tao, Xingbin Li, Zhizhong Chen, Jianping Wang, and Guoyi Zhang. “Efficiency droop suppression of InGaN-based blue light-emitting diodes using dip-shaped quantum wells,” Physica Status Solidi A: Applications and Materials Science, 2016, 213(5): 1187. (SCI)

Huimin Lu, Tongjun Yu, Gangcheng Yuan, Xinjuan Chen, Zhizhong Chen, Genxiang Chen, and Guoyi Zhang, “Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells,” Optics Letters, 2012, 37(17): 3693. (SCI)
Huimin Lu, Tongjun Yu, Gangcheng Yuan, Chuanyu Jia, Genxiang Chen, and Guoyi Zhang, “Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN Quantum Wells,” Optics Express, 2012, 20(25): 27384. (SCI)
Huimin Lu, Genxiang Chen. “Design Strategies for Mitigating the Influence of Polarization Effect on GaN-Based Multiple Quantum Well Light Emitting Diodes,” Journal of Applied Physics, 2011, 109(9), 093102. (SCI)
Huimin Lu, Genxiang Chen. “Optimization of a GaN-based irregular multiple quantum well structure for a dichromatic white LED,” Chinese Physics B, 2011, 20(3): 037807. (SCI)
Huimin Lu, Genxiang Chen and Shuisheng Jian. “Design of phosphor-free single-chip white light-emitting diodes using InAlGaN irregular multiple quantum well structures,” Chinese Physics Letters, 2009, 26(8): 087803. (SCI)

1. The National Natural Science Foundation of China Youth Project, research on high modulation frequency GaN-based single-chip phosphor-free white light LED, chair
2. General project of China Postdoctoral Science Foundation, the influence and improvement of LED light source characteristics in visible light communication on system performance, chair
3. General project of National Natural Science Foundation of China, ROF-based research on key technologies of high-speed rail visible light communication, participation
4. General project of National Natural Science Foundation of China, GaN nano-hetero-epitaxial growth and its application in light-emitting devices, participating
5. Beijing Natural Science Foundation, research on high-performance visible light LED wireless communication system, participation
6. Major science and technology projects of Guangdong Province, key technology and application research of visible light communication engineering, participation